Перегляд за автором "Nikolenko, A.S."

Сортувати за: Порядок: Результатів:

  • Graphene layers fabricated from the Ni/a-SiC bilayer precursor 
    Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering ...
  • Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix 
    Nikolenko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Influence of combined size confinement effect and effect of local laser heating on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has been studied. Increase of the local temperature ...
  • Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties 
    Borblik, V.L.; Korchevoi, A.A.; Nikolenko, A.S.; Strelchuk, V.V.; Fonkich, A.M.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface ...
  • Photoresponse in Ge/Si nanostructures with quantum dots 
    Nikolenko, A.S.; Kondratenko, S.V.; Vakulenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed ...
  • The growth of weakly coupled graphene sheets from silicon carbide powder 
    Kiselov, V.S.; Lytvyn, P.M.; Nikolenko, A.S.; Strelchuk, V.V.; Stubrov, Yu.Yu.; Tryus, M.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly ...